IPD13N03LA G

IPD13N03LA G - Infineon Technologies

Part Number
IPD13N03LA G
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 25V 30A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPD13N03LA G PDF online browsing
Datasheet PDF Download
IPD13N03LA G.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3577 pcs
Reference Price
USD 0/pcs
Our Price
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IPD13N03LA G Detailed Description

Part Number IPD13N03LA G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1043pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Rds On (Max) @ Id, Vgs 12.8 mOhm @ 30A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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