FQT1N80TF-WS

FQT1N80TF-WS - ON Semiconductor

Part Number
FQT1N80TF-WS
Manufacturer
ON Semiconductor
Brief Description
MOSFET N-CH 800V 0.2A SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FQT1N80TF-WS PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
354140 pcs
Reference Price
USD 0.46493/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for FQT1N80TF-WS

FQT1N80TF-WS Detailed Description

Part Number FQT1N80TF-WS
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V
FET Feature -
Power Dissipation (Max) 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR FQT1N80TF-WS