| Part Number | IPI070N06N G |
|---|---|
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPI020N06NAKSA1 | Infineon Technologies | MOSFET N-CH 60V 29A TO262-3 | Details |
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IPI023NE7N3 G | Infineon Technologies | MOSFET N-CH 75V 120A TO262-3 | Details |
|
IPI024N06N3GHKSA1 | Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | Details |
|
IPI024N06N3GXKSA1 | Infineon Technologies | MOSFET N-CH 60V 120A | Details |
|
IPI028N08N3GHKSA1 | Infineon Technologies | MOSFET N-CH 80V 100A TO262-3 | Details |
|
IPI029N06NAKSA1 | Infineon Technologies | MOSFET N-CH 60V 24A TO262-3 | Details |
|
IPI030N10N3GHKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | Details |
|
IPI030N10N3GXKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A | Details |
|
IPI032N06N3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | Details |
|
IPI032N06N3GAKSA1 | Infineon Technologies | MOSFET N-CH 60V 120A | Details |
