| Part Number | JAN1N6312US/TR |
|---|---|
| Part Status | Active |
| Voltage - Zener (Nom) (Vz) | 3.3V |
| Tolerance | ±5% |
| Power - Max | 500mW |
| Impedance (Max) (Zzt) | 27 Ohms |
| Current - Reverse Leakage @ Vr | 5µA @ 1V |
| Voltage - Forward (Vf) (Max) @ If | 1.4V @ 1A |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, B |
| Supplier Device Package | B, SQ-MELF |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
JAN1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | Details |
|
JAN1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | Details |
|
JAN1N1186R | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | Details |
 |
JAN1N1188 | Microsemi Corporation | DIODE GEN PURP 400V 35A DO5 | Details |
|
JAN1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | Details |
|
JAN1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | Details |
|
JAN1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | Details |
|
JAN1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
|
JAN1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
|
JAN1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | Details |
