| Part Number | BYG10YHE3_A/I |
|---|---|
| Part Status | Active |
| Diode Type | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 1600V |
| Current - Average Rectified (Io) | 1.5A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 1.5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4µs |
| Current - Reverse Leakage @ Vr | 1µA @ 1600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | SMA (DO-214AC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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BYG10 | VISHAY | Silicon Mesa SMD Rectifier | Details |
|
BYG10A | VISHAY | BYG10A VISHAY DO-214.. New Original Stocks | Details |
|
BYG10C | VISHAY | BYG10C VISHAY DO-214.. New Original Stocks | Details |
|
BYG10D | VISHAY | Silicon Mesa SMD Rectifier | Details |
|
BYG10D-E3/TR | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Details |
|
BYG10D-E3/TR3 | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Details |
|
BYG10D-M3/TR | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Details |
|
BYG10D-M3/TR3 | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Details |
 |
BYG10DHE3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A SMA | Details |
|
BYG10DHE3_A/I | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A SMA | Details |
