| Número de pieza | GSID150A120S6A4 |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | - |
| Configuración | Single |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 275A |
| Potencia - Max | 1035W |
| Vce (on) (Max) @ Vge, Ic | 1.9V @ 15V, 150A |
| Corriente - corte de colector (máximo) | 1mA |
| Capacitancia de entrada (Cies) @ Vce | 20.2nF @ 25V |
| Entrada | Standard |
| Termistor NTC | Yes |
| Temperatura de funcionamiento | -40°C ~ 150°C |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | Module |
| Paquete de dispositivo del proveedor | Module |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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GSID100A120S5C1 | Global Power Technologies Group | IGBT MODULE 1200V 170A | Detalles |
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GSID100A120T2C1 | Global Power Technologies Group | SILICON IGBT MODULES | Detalles |
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GSID100A120T2C1A | Global Power Technologies Group | SILICON IGBT MODULES | Detalles |
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GSID100A120T2P2 | Global Power Technologies Group | SILICON IGBT MODULES | Detalles |
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GSID150A120S3B1 | Global Power Technologies Group | SILICON IGBT MODULES | Detalles |
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GSID150A120S5C1 | Global Power Technologies Group | IGBT MODULE 1200V 285A | Detalles |
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GSID150A120S6A4 | Global Power Technologies Group | SILICON IGBT MODULES | Detalles |
|
GSID150A120T2C1 | Global Power Technologies Group | SILICON IGBT MODULES | Detalles |
