| Número de pieza | BYG10K-M3/TR |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Avalanche |
| Voltaje - DC Reverse (Vr) (Max) | 800V |
| Corriente - promedio rectificado (Io) | 1.5A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.15V @ 1.5A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 4µs |
| Current - Reverse Leakage @ Vr | 1µA @ 800V |
| Capacitancia @ Vr, F | - |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AC, SMA |
| Paquete de dispositivo del proveedor | DO-214AC (SMA) |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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BYG10 | VISHAY | Silicon Mesa SMD Rectifier | Detalles |
|
BYG10A | VISHAY | BYG10A VISHAY DO-214.. New Original Stocks | Detalles |
|
BYG10C | VISHAY | BYG10C VISHAY DO-214.. New Original Stocks | Detalles |
|
BYG10D | VISHAY | Silicon Mesa SMD Rectifier | Detalles |
|
BYG10D-E3/TR | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Detalles |
|
BYG10D-E3/TR3 | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Detalles |
|
BYG10D-M3/TR | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Detalles |
|
BYG10D-M3/TR3 | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A | Detalles |
 |
BYG10DHE3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A SMA | Detalles |
|
BYG10DHE3_A/I | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 1.5A SMA | Detalles |
