global power technologies group, inc. is an integrated development and manufacturing company dedicated to products based on silicon carbide (sic) technologies.
Immagine Numero di parte Descrizione vista
GP1M003A090PH GP1M003A090PH MOSFET N-CH 900V 2.5A IPAK Dettagli
GP1M003A080FH GP1M003A080FH MOSFET N-CH 800V 3A TO220F Dettagli
GP2M020A050N GP2M020A050N MOSFET N-CH 500V 20A TO3PN Dettagli
GP2M009A090NG GP2M009A090NG MOSFET N-CH 900V 9A TO3PN Dettagli
GP2M008A060HG GP2M008A060HG MOSFET N-CH 600V 7.5A TO220 Dettagli
GP2M004A065HG GP2M004A065HG MOSFET N-CH 650V 4A TO220 Dettagli
GP2D012A060A GP2D012A060A DIODE SCHOTTKY 600V 12A TO220-2 Dettagli
GP2D003A060A GP2D003A060A DIODE SCHOTTKY 600V 3A TO220-2 Dettagli
GP2D006A060A GP2D006A060A DIODE SCHOTTKY 600V 6A TO220-2 Dettagli
GP2D005A060A GP2D005A060A SCHOTTKY DIODE 600V 5A TO-220-2L Dettagli
GP2D006A060C GP2D006A060C DIODE SCHOTTKY 600V 6A TO252-2 Dettagli
GP2D003A065A GP2D003A065A DIODE SCHOTTKY 650V 3A TO220-2 Dettagli
GP2D008A120A GP2D008A120A SCHOTTKY DIODE 1200V 8A TO-220-2 Dettagli
GP2D020A060B GP2D020A060B SCHOTTKY DIODE 600V 20A TO-247-2 Dettagli
GHIS075A120T2P2 GHIS075A120T2P2 SI IGBT & SIC SBD HYBRID MODULES Dettagli
GHXS050A170S-D3 GHXS050A170S-D3 1700V 50A SIC SBD PARALLEL Dettagli
GCMS080A120B3C1 GCMS080A120B3C1 SIC MOSFET 6-PACK MODULE B2_EASY Dettagli
GCMS080A120S1-E1 GCMS080A120S1-E1 SIC MOSFET/ SBD MODULE SOT-227 C Dettagli
GCMS010A120S7B1 GCMS010A120S7B1 SIC MOSFET/SBD HALF BRIDGE MODUL Dettagli
GHIS050A060B3P2 GHIS050A060B3P2 SI IGBT & SIC SBD HYBRID MODULES Dettagli