FDZ193P - Fairchild/ON Semiconductor

Part Number	FDZ193P
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.7V, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	1.9W (Ta)
Rds On (Max) @ Id, Vgs	90 mOhm @ 1A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WLCSP
Package / Case	6-UFBGA, WLCSP
Weight	-
Country of Origin	-

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