FQI12N60CTU

FQI12N60CTU - Fairchild/ON Semiconductor

Part Number
FQI12N60CTU
Manufacturer
Fairchild/ON Semiconductor
Brief Description
MOSFET N-CH 600V 12A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FQI12N60CTU PDF online browsing
Datasheet PDF Download
FQI12N60CTU.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3794 pcs
Reference Price
USD 0/pcs
Our Price
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FQI12N60CTU Detailed Description

Part Number FQI12N60CTU
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 225W (Tc)
Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight -
Country of Origin -

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