IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1 - Infineon Technologies

Part Number
IPG16N10S4L61AATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET 2N-CH 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPG16N10S4L61AATMA1 PDF online browsing
Datasheet PDF Download
IPG16N10S4L61AATMA1.pdf
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
72155 pcs
Reference Price
USD 0.3753/pcs
Our Price
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IPG16N10S4L61AATMA1 Detailed Description

Part Number IPG16N10S4L61AATMA1
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 16A
Rds On (Max) @ Id, Vgs 61 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 25V
Power - Max 29W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
Weight -
Country of Origin -

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