| Part Number | JAN1N5616/TR |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 3A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 500nA @ 400V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | A, Axial |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
JAN1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | Details |
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JAN1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | Details |
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JAN1N1186R | Microsemi Corporation | DIODE GEN PURP 200V 35A DO203AB | Details |
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JAN1N1188 | Microsemi Corporation | DIODE GEN PURP 400V 35A DO5 | Details |
|
JAN1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | Details |
|
JAN1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | Details |
|
JAN1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO203AB | Details |
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JAN1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
|
JAN1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
|
JAN1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | Details |
