| Part Number | JANTX1N5806US/TR |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 975mV @ 2.5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25ns |
| Current - Reverse Leakage @ Vr | 1µA @ 150V |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SQ-MELF, A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
JANTX1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO5 | Details |
|
JANTX1N1184R | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | Details |
|
JANTX1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO5 | Details |
|
JANTX1N1186R | Microsemi Corporation | SILICON RECTIFIER | Details |
|
JANTX1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | Details |
 |
JANTX1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | Details |
 |
JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | Details |
 |
JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
|
JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | Details |
 |
JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | Details |
