PHB110NQ06LT,118

PHB110NQ06LT,118 - NXP USA Inc.

Part Number
PHB110NQ06LT,118
Manufacturer
NXP USA Inc.
Brief Description
MOSFET N-CH 55V 75A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
PHB110NQ06LT,118 PDF online browsing
Datasheet PDF Download
PHB110NQ06LT,118.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4100 pcs
Reference Price
USD 0/pcs
Our Price
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PHB110NQ06LT,118 Detailed Description

Part Number PHB110NQ06LT,118
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 3960pF @ 25V
Vgs (Max) ±15V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Rds On (Max) @ Id, Vgs 7 mOhm @ 25A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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