RS1JLS RVG - Taiwan Semiconductor Corporation

Part Number	RS1JLS RVG
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	1.2A
Voltage - Forward (Vf) (Max) @ If	1.3V @ 1.2A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	300ns
Current - Reverse Leakage @ Vr	5µA @ 600V
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Package / Case	SOD-123H
Supplier Device Package	SOD-123HE
Operating Temperature - Junction	-55°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RS1J	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 1A SMA	Details
RS1J M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Details
RS1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Details
RS1J-13	Diodes Incorporated	DIODE GEN PURP 600V 1A SMA	Details
RS1J-13-F	Diodes Incorporated	DIODE GEN PURP 600V 1A SMA	Details
RS1J-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details
RS1J-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details
RS1J-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SW 1A 600V DO-214AC	Details
RS1J-M3/61T	Vishay Semiconductor Diodes Division	DIODE SW 1A 600V DO-214AC	Details
RS1J/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details