DG636EEN-T1-GE4 Detailed Description
Part Number |
DG636EEN-T1-GE4 |
Part Status |
Active |
Switch Circuit |
SPDT |
Multiplexer/Demultiplexer Circuit |
2:1 |
Number of Circuits |
2 |
On-State Resistance (Max) |
96 Ohm |
Channel-to-Channel Matching (ΔRon) |
300 mOhm |
Voltage - Supply, Single (V+) |
3V ~ 16V |
Voltage - Supply, Dual (V±) |
±3V ~ 8V |
Switch Time (Ton, Toff) (Max) |
46ns, 55ns |
-3db Bandwidth |
700MHz |
Charge Injection |
-0.33pC |
Channel Capacitance (CS(off), CD(off)) |
3.7pF, 4.4pF |
Current - Leakage (IS(off)) (Max) |
1nA |
Crosstalk |
-62dB @ 1MHz |
Operating Temperature |
-40°C ~ 125°C (TA) |
Package / Case |
16-UFQFN |
Supplier Device Package |
16-miniQFN (1.8x2.6) |
Weight |
- |
Country of Origin |
- |
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